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| Schottky Barrier Diodes (SBD) MA3X748 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 0.15 2.8 - 0.3 1.5 - 0.05 + 0.25 + 0.2 0.65 0.15 * Low VF type of MA2Z720 * High rectification efficiency caused by its low forward-risevoltage (VF) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 0.95 1.9 0.2 2.9 - 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 I Features 1.1 - 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 -55 to +125 Unit V V mA A C C 0.1 to 0.3 0.4 0.2 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4E Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 500 mA IF = 10 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 60 5 Conditions Min Typ Max 30 0.5 0.3 Unit A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.1 0.4 - 0.05 + 0.1 1 MA3X748 IF V F 1 Schottky Barrier Diodes (SBD) IR V R 104 Ta = 125C 0.8 0.7 VF Ta 10-1 Ta = 125C Reverse current IR (A) Forward voltage VF (V) Forward current IF (A) 75C 25C - 20C 103 0.6 0.5 0.4 0.3 0.2 50 mA 0.1 5 mA IF = 500 mA 75C 102 10-2 10-3 10 25C 10-4 1 10-5 10-1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR T a 104 VR = 20 V 10 V 6V 200 Ct VR 1 000 IF(surge) tW Ta = 25C Forward surge current IF(surge) (A) 300 tW 100 30 10 3 1 0.3 0.1 0.1 IF(surge) 103 Terminal capacitance Ct (pF) Reverse current IR (A) 150 102 100 10 50 1 10-1 -40 0 0 40 80 120 160 200 0 5 10 15 20 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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